IGBT МОДУЛИ

IGBT Modules as: PRX IGBT Module , Mitsubishi IGBT Module , Sanrex IGBT Module , Fuji IGBT Module , Toshiba IGBT Module , Fuji IGBT Module , Siemens IGBT Module , Eupec IGBT Module , Semikron IGBT Module , ABB IGBT Module , IR IGBT Module , FAIRCHILD IGBT Module , HITACHI IGBT Module , IXYS IGBT Module , PRX IGBT , Mitsubishi IGBT , Sanrex IGBT , Fuji IGBT , Toshiba IGBT , Fuji IGBT , Siemens IGBT , Eupec IGBT , Semikron IGBT , ABB IGBT , IR IGBT , FAIRCHILD IGBT , HITACHI IGBT , IXYS IGBT 

What is igbt ?

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air-conditioners, and even stereo systems with digital amplifiers. Since it is designed to rapidly turn on and off, amplifiers that use it often synthesize complex waveforms with pulse width modulation and low-pass filters. (IGBT Modules as: PRX IGBT Module , Mitsubishi IGBT Module , Sanrex IGBT Module , Fuji IGBT Module , Toshiba IGBT Module , Fuji IGBT Module , Siemens IGBT Module , Eupec IGBT Module , Semikron IGBT Module , ABB IGBT Module , IR IGBT Module , FAIRCHILD IGBT Module , HITACHI IGBT Module , IXYS IGBT Module , PRX IGBT , Mitsubishi IGBT , Sanrex IGBT , Fuji IGBT , Toshiba IGBT , Fuji IGBT , Siemens IGBT , Eupec IGBT , Semikron IGBT , ABB IGBT , IR IGBT , FAIRCHILD IGBT , HITACHI IGBT , IXYS IGBT )

The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated-gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The IGBT is used in medium- to high-power applications such as switched-mode power supply, traction motor control and induction heating. Large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amps with blocking voltages of 6,000 V.

Because of their insulated gates, IGFETs of all types have extremely high current gain: there can be no sustained gate current if there is no continuous gate circuit in which electrons may continually flow. The only current we see through the gate terminal of an IGFET, then, is whatever transient (brief surge) may be required to charge the gate-channel capacitance and displace the depletion region as the transistor switches from an "on" state to an "off" state, or vice versa.

This high current gain would at first seem to place IGFET technology at a decided advantage over bipolar transistors for the control of very large currents. If a bipolar junction transistor is used to control a large collector current, there must be a substantial base current sourced or sunk by some control circuitry, in accordance with the ? ratio. To give an example, in order for a power BJT with a ? of 20 to conduct a collector current of 100 amps, there must be at least 5 amps of base current, a substantial amount of current in itself for miniature discrete or integrated control circuitry to handle:

It would be nice from the standpoint of control circuitry to have power transistors with high current gain, so that far less current is needed for control of load current. Of course, we can use Darlington pair transistors to increase the current gain, but this kind of arrangement still requires far more controlling current than an equivalent power IGFET:

Unfortunately, though, IGFETs have problems of their own controlling high current: they typically exhibit greater drain-to-source voltage drop while saturated than the collector-to-emitter voltage drop of a saturated BJT. This greater voltage drop equates to higher power dissipation for the same amount of load current, limiting the usefulness of IGFETs as high-power devices. Although some specialized designs such as the so-called VMOS transistor have been designed to minimize this inherent disadvantage, the bipolar junction transistor is still superior in its ability to switch high currents.

An interesting solution to this dilemma leverages the best features of IGFETs with the best of features of BJTs, in one device called an Insulated-Gate Bipolar Transistor, or IGBT. Also known as an Bipolar-mode MOSFET, a Conductivity-Modulated Field-Effect Transistor (COMFET), or simply as an Insulated-Gate Transistor (IGT), it is equivalent to a Darlington pair of IGFET and BJT:

In essence, the IGFET controls the base current of a BJT, which handles the main load current between collector and emitter. This way, there is extremely high current gain (since the insulated gate of the IGFET draws practically no current from the control circuitry), but the collector-to-emitter voltage drop during full conduction is as low as that of an ordinary BJT.

One disadvantage of the IGBT over a standard BJT is its slower turn-off time. For fast switching and high current-handling capacity, its difficult to beat the bipolar junction transistor. Faster turn-off times for the IGBT may be achieved by certain changes in design, but only at the expense of a higher saturated voltage drop between collector and emitter. However, the IGBT provides a good alternative to IGFETs and BJTs for high-power control applications.

High-power semiconductor devices used for electric power conversion and other applications in industrial machinery and robots, air conditioner compressors, semiconductor manufacturing equipment, motor drives of automobiles and hybrid electric vehicles, welders and UPS (uninterruptible power suppliers), medical equipment, and the like, are supplied mainly as power modules. From the commercialization of IGBT products in 1988 through the present, due to their excellent performance and controllability, IGBTs have evolved to become the type of transistors used most commonly in power modules.

At its IGBT module lineup, Fuji Electric first began supplying a standard module series, but then with the 2nd generation of modules, added an IPM (intelligent power module) and PIM (power integrated module) series and, with the 3rd generation dramatically increased the number of types of models, and then with the 4th generation, added a small-size low-cost EconoPACK (trade mark of Eupec GmbH. Warstein) series.

With the 5th generation (U-series released in 2002), Fuji Electric added a 1,700 V series of modules, expanded the large-current series to 3,600 A, started to provide custom designed IGBT modules for hybrid vehicles, and advanced the commercialization of reverse-blocking IGBT modules for matrix converter use. However, with the 6th generation of devices, IGBT performance improvements will approach their limit, and a radically innovative device structure will be needed to realize the 7th generation devices (expected to be released in 2009 or 2010).